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Silicon-power VCS FF 05N14_N-MOS VCS, F-Pak Manual de usuario Pagina 1

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Description F-Pak
Features
Schematic Symbol
Applications
ESA / EFI
The Voltage Controlled Solidtron
TM
(VCS) features high peak
current capability and a low on-state voltage drop common to
SCR thyristors. Additionally if features extremely high turn-on
di/dt capability and virtually no turn-on delay jitter making it
ideally suited for a variety of capacitor discharge applications.
The 4-pin F-Pak SM package offers a rugged low inductance
interface and allows for installation using automated handling
equipment. The package consists of an epoxy filled 4 contact
FR4 substrate.
1400V Peak Off-State Voltage
3.0kA Repetitive Peak Anode Current
120kA/uSec dI/dt Capability
18nSec Turn-On Delay
Low Loss
MOS Gate Control
Anode (A)
VCSFF05N14A10
275 Great Valley Parkway
Malvern, PA 19355
Ph: 610-407-4700
fax: 610-407-3688
Solidtron
TM
N-MOS VCS, F-Pak
Data Sheet (Rev 6 - 06/17/11)
Limiting Characteristics and Ratings
SYMBOL VALUE UNITS
Peak Off-State Voltage
V
DRM
1400 V
Peak Reverse Voltage
V
RRM
-30 V
Off-State Rate of Change of Voltage Immunity (V
D
=1400V)
dv/dt
5000 V/uSec
Non-repetitive Peak Anode Current (Sinusoid Pulse Duration=250nSec)
I
ASM
4800 A
Repetitive Peak Anode Current (Sinusoid Pulse Duration=250nSec)
I
ASM
3000 A
Rate of Change of Current
dI/dt
120 kA/uSec
Continuous Gate-Cathode Voltage
V
GKS
+/-20 V
Peak Gate-Cathode Voltage
V
GKM
+/-25 V
Minimum Gate-Cathode Voltage Required for Guaranteed Off-State
V
GK(OFF-MIN)
0V
Maximum Junction Temperature
T
JM
125
o
C
Maximum Soldering Temperature (Installation) 260
o
C
Gate (G)
Cathode (K)
Gate Return (GR)
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Indice de contenidos

Pagina 1 - VCSFF05N14A10

Description F-PakFeaturesSchematic SymbolApplicationsESA / EFI The Voltage Controlled SolidtronTM(VCS) features high peak current capability and a low

Pagina 2

Performance Characteristics TJ=25oC unless otherwise specifiedMeasurementsParameters Symbol Test Conditions Min. Typ. Max. UnitsAnode to Cathode

Pagina 3

Typical Performance Curves (Continued)Figure 2 On state characteristicsTest Circuit and WaveformsVCSFF05N14A10SolidtronTMN-MOS VCS, F-PakData Sheet (R

Pagina 4

Package DimensionsVCSFF05N14A10SolidtronTMN-MOS VCS, F-PakData Sheet (Rev 6- 06/17/11)275 Great Valley ParkwayMalvern, PA 19355Ph: 610-407-4700fax: 61

Pagina 5

Recommended Reflow Profile:VCSFF05N14A10SolidtronTMN-MOS VCS, F-PakData Sheet (Rev 6 - 06/17/11)275 Great Valley ParkwayMalvern, PA 19355Ph: 610-407-4

Pagina 6

VCSFF05N14A10SolidtronTMN-MOS VCS, F-PakData Sheet (Rev 6 - 06/17/11)275 Great Valley ParkwayMalvern, PA 19355Ph: 610-407-4700fax: 610-407-3688General

Pagina 7

Revision HistoryRev Date EA #3 04242009-NB-00054 56 06-17-2011 Updated drawingNature of Change05-04-2009 Initial Issue07-09-2010 05-20-2011 Use of Ga

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