Silicon-power CCS AC 14N40_N-Type Semiconductor Discharge Switch Manual de usuario descargar pdf

Description

Package

Size - 12

Schematic Symbol

Features

Bare Die

Anode

Bond Area on

bottom

This current controlled Solidtron

(CCS) discharge switch is a

bare die of an n-type Thyristor. The device gate is similar to that

found on a traditional GTO Thyristor.

The CCS features the high peak current capability and low On-

state voltage drop common to SCR thyristors combined with

high di/dt capability. This semiconductor is intended to be a

solid state replcement for spark or gas type devices commonly

used in pulse power applications.

It's small size and low profile make it extremely attractive for

high di/dt applications where stray series inductance must be

kept to a minimum.

 4000V Peak Off-State Voltage



10 kA Repetitive Ipk Capability

 Low On-State Voltage



Low trigger current

Anode (A)

Gate (G)

Cathode contacts

Gate contact

Solidtron

N-Type Semiconductor Discharge Switch, Bare

Die

Data Sheet (Rev 0)

CCSAC14N40A10

275 Great Valley Parkway

Malvern, PA 19355

Ph: 610-407-4700

Fax: 610-407-3688

Absolute Maximum Ratings

SYMBOL VALUE UNITS

Peak Off-State Voltage

DRM

4 kV

Peak Reverse Voltage

RRM

-30 V

Off-State Rate of Change of Voltage Immunity*

dv/dt

1 kV/uSec

Continuous Anode Current at Tj = 125

A110

100 A

Repetitive Peak Anode Current (Pulse Width=10uSec)

ASM

10.0 kA

Nonrepetitive Peak Anode Current (Pulse Width=10uSec)

ASM

14 kA

Rate of Change of Current

dI/dt

30 kA/uSec

Peak Gate Current (1 uS)

IGpk

100 A

Max. Reverse Gate-Cathode Voltage

-9 V

Maximum Junction Temperature

125

Maximum Soldering Temperature (Installation) 260

This SILICON POWER product is protected by one or more of the following U.S. Patents:

CAO 08/19/09

5,446,316

5,557,656

5,564,226

5,517,058

4,814,283

5,135,890

5,521,436

5,585,310

5,248,901

5,366,932

5,497,013

5,532,635

5,105,536

5,777,346

5,446,316

5,577,656

5,473,193

5,166,773

5,209,390

5,139,972

5,103,290

5,028,987

5,304,847

5,569,957

4,958,211

5,111,268

5,260,590

5,350,935

5,640,300

5,184,206

5,206,186

5,757,036

5,777,346

5,995,349

4,801,985

4,476,671

4,857,983

4,888,627

4,912,541

5,424,563

5,399,892

5,468,668

5,082,795

4,980,741

4,941,026

4,927,772

4,739,387

4,648,174

4,644,637

4,374,389

4,750,666

4,429,011

5,293,070



10 kA Repetitive Ipk Capability

 30 KA/uS di/dt Capability



Low trigger current

 Low Inductance Package

Cathode (K)

Preliminary Data Sheet - Product Status : First Production : This data sheet contains preliminary data . Supplementary data will be

published at a later date. Silicon Power reserves the right to make changes at any time without notice.

* Requires a 10 ohm gate to cathode shorting resistor.

CAO 08/19/09

1 2 3 4 5

CCSAC14N40A10 1

Indice de contenidos

Pagina 1 - CCSAC14N40A10

DescriptionPackageSize - 12Schematic SymbolFeaturesBare DieAnodeBond Area onbottomThis current controlled SolidtronTM(CCS) discharge switch is a bare

Pagina 2

Performance Characteristics TJ=25oC unless otherwise specifiedMeasurementsParameters Symbol Test Conditions Min. Typ. Max. UnitsAnode to Cathode

Pagina 3

Typical Performance Curves (Continued)SolidtronTMN-Type Semiconductor Discharge Switch, BareDieData Sheet (Rev 0)CCSAC14N40A10275 Great Valley Parkway

Pagina 4

Application NotesoVGE=15VT=125oC, V=15VT=125oC, VGE=15VT=125oC, V=15VA1. Pulse Transformer GatingA preferred method of isolation, a pulse transforme

Pagina 5

Packaging and HandlingoVGE=15VT=125oC, V=15V1. Use of a seperate gate return path instead of the cathode power contact is recomended to minimize the

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