Silicon-power CCS TA 43N40_N-Type Semiconductor Discharge Switch Manual de usuario descargar pdf (Pagina 3)

Typical Performance Curves

(Continued)

Figure 3.

Predicted I

t data for various number of discharge cycles. Pulses are assumed rectangular.

The device junction temperature T

is assumed to be at 25

C before each discharge event.

275 Great Valley Parkway

Malvern, PA 19355

Ph: 610-407-4700

CCSTA43N40A10

Solidtron

N-Type Semiconductor Discharge Switch, ThinPak

The device junction temperature T

is assumed to be at 25

C before each discharge event.

Test Circuit

Figure 4. Typical test circuit and waveforms.

CAO 05/28/09

 L

SERIES(TOTAL)

can be caculated using

equation 1 / (f 2π)

C where f = frequency of I

when using CCSTA43N40 for circuit set up and

calibration.

 The waveform shown is representative of one

produced using the test circuit shown where the

DUT is the CCSTA43N40 Solidtron. The C1

capacitor voltage in this example was at 3750V.

Ik peaked at 4kA at 1us and the peak gate

current Ig is 1A.

A-K DUT

k DUT

DUT

=1 ohm

=10 ohms

=6 uF

~45uH

CAO 05/28/09

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Silicon-power CCS TA 43N40_N-Type Semiconductor Discharge Switch Manual de usuario Pagina 3