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Silicon-power CCS TA 14N40_N-Type Semiconductor Discharge Switch Manual de usuario Pagina 5

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Packaging and Handling
o
V
GE
=15V
T
=125
o
C, V
=15V
1. The CCSTA14N40 uses an undersized ceramic "lid" which exposes the sensitive Junction Termination
Extention (JTE) of the device. The user is required to encapsulate the device in an encapsulant prior to
applying high voltage. This prevents debris and contaminants from compromising the JTE.
2. Use of a seperate gate return path instead of the cathode power contact is recomended to minimize
the effects of rapidly changing Anode-Cathode currents.
3. Shorting resistor R
GK
is application specific. It can control the gate drive requirements and some
device
properties. However, R
GK
= 10 Ohms satisfies most application requirements.
4. Installation reflow temperature should not exceed 260
o
C or internal package degradation may result.
5. Proper handling procedures must be observed to prevent electrostatic discharge which may result in
permanent damage to the gate of the device.
Solidtron
TM
N-Type Semiconductor Discharge
Switch, ThinPak
TM
Data Sheet (Rev 0 - 05/12/08)
CCSTA14N40A10
275 Great Valley Parkway
Malvern, PA 19355
Ph: 610-407-4700
Fax: 610-407-3688
Dimensions
Revision History
Rev EA #
0 04242009-NB-0017
CAO 05/28/09
Date Nature of Change
05-12-2008 Initial Issue
CAO 05/28/09
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