Silicon-power CCS AC 14N40_N-Type Semiconductor Discharge Switch Manual de usuario Pagina 3

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Typical Performance Curves
(Continued)
Solidtron
TM
N-Type Semiconductor Discharge Switch, Bare
Die
Data Sheet (Rev 0)
CCSAC14N40A10
275 Great Valley Parkway
Malvern, PA 19355
Ph: 610-407-4700
Fax: 610-407-3688
Figure 3.
Predicted I
2
t data for various number of discharge cycles. Pulses are assumed rectangular.
The device junction temperature T
J
is assumed to be at 25
o
C before each discharge event.
Test Circuit
Figure 4. Typical test circuit and waveforms.
CAO 08/19/09
L
SERIES(TOTAL)
is caculated using
1 / (f 2π)
2
C
where f = frequency of I
A
when using
CCSTA14N40 for circuit set up and
calibration.
The waveform shown is representative
of one produced using the test circuit
shown where the DUT is the CCS AC
14N40 Solidtron. The C1 capacitor
voltage in this example was at 2.1kV. Ik
peaked at 4kA at 1us and the peak gate
current Ig is 1A.
R
1
D
2
D
1
L
1
C
1
DUT
D
4
D
3
R
2
T
1
R
1
=1 ohm
R
2
=10 ohms
C
1
=6 uF
L
1
~45uH
CAO 08/19/09
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